ss32 thru ss36 vishay general semiconductor document number: 88751 revision: 23-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? low forward voltage drop ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. mechanical data case: do-214ab (smc) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 3.0 a v rrm 20 v to 60 v i fsm 100 a e as 20 mj v f 0.5 v, 0.75 v t j max. 125 c, 150 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss32 ss33 SS34 ss35 ss36 unit device marking code s2 s3 s4 s5 s6 maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 v maximum rms voltage v rms 14 21 28 35 42 v maximum dc blocking voltage v dc 20 30 40 50 60 v maximum average forward rectified current at t l (fig. 1) i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a non-repetitive avalanche energy at t a = 25 c, i as = 2.0 a, l = 10 mh e as 20 mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 55 to + 125 - 55 to + 150 c storage temperature range t stg - 55 to + 150 c
ss32 thru ss36 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88751 revision: 23-jan-08 2 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) p.c.b. mounted 0.55 x 0.55" (14 x 14 mm) copper pad areas note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ss32 ss33 SS34 ss35 ss36 unit maximum instantaneous forward voltage (1) 3.0 a v f 0.5 0.75 v maximum dc reverse current at rated dc blocking voltage (1) t a = 25 c t a = 100 c i r 0.5 ma 20 10 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol ss32 ss33 SS34 ss35 ss36 unit typical thermal resistance (1) r ja r jl 55 17 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode SS34-e3/57t 0.235 57t 850 7" diam eter plastic tape and reel SS34-e3/9at 0.235 9at 3500 13" di ameter plastic tape and reel SS34he3/57t (1) 0.235 57t 850 7" diameter plastic tape and reel SS34he3/9at (1) 0.235 9at 3500 13" diameter plastic tape and reel figure 1. forward current derating curve 50 170 70 90 110 130 150 0 1.5 2.5 3.5 resisti v e or ind u cti v e load ss32 - SS34 ss35 & ss36 am b ient temperat u re (c) a v erage for w ard c u rrent (a) p. c . b . m o u nted on 0.55 x 0.55" (14 x 14 mm) copper pad areas 0.5 1.0 2.0 3.0 figure 2. maximum non-repetitive peak forward surge current 1 10 100 0 20 40 60 8 0 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) at rated t l 8 .3 ms single half sine- w a v e
ss32 thru ss36 vishay general semiconductor document number: 88751 revision: 23-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reverse current characteristics 0 0.4 0. 8 1.2 0.01 0.1 1 10 100 0.2 0.6 1.0 1.4 1.6 t j = 150 c t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) ss32 - SS34 ss35 & ss36 0 20 40 60 8 0 100 100 10 1 0.1 0.01 0.001 ss32 - SS34 ss35 & ss36 t a = 125 c t a = 25 c t a = 75 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 0.1 1 10 100 10 1000 ss32 - SS34 ss35 & ss36 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capaci tance (pf) 100 0.01 0.1 1 10 100 0.1 1 10 100 transient thermal impedance (c/ w ) t - p u lse d u ration (s) 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc) 0.1 8 5 (4.69) max. 0.320 ref. 0.126 (3.20) mi n . 0.060 (1.52) mi n . mountin g pad layout 0 (0)
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